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G-forbes Micron MTA18ADF2G72PDZ-3G2E1R memory module 16 GB 1 x 16 GB DDR4 3200 MHz

Quick Code: Q802055Part Code: MTA18ADF2G72PDZ-3G2E1RMicron
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Micron MTA18ADF2G72PDZ-3G2E1R
 
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G-forbes Micron MTA18ADF2G72PDZ-3G2E1R memory module 16 GB 1 x 16 GB DDR4 3200 MHz
Quick Code: Q802055Part Code: MTA18ADF2G72PDZ-3G2E1R
  • 16 internal banks; 4 groups of 4 banks each
  • 16GB (2 Gig x 72)
  • 288-pin, registered dual in-line very low profile memory module (VLP RDIMM)
  • Data bus inversion (DBI) for data bus
  • DDR4 functionality and operations supported as defined in the component data sheet
  • Dual-rank
  • Fast data transfer rate:PC4-3200, PC4-2400
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Fly-by topology
  • Gold edge contacts
  • Halogen-free
  • Low-power auto self refresh (LPASR)
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • On-board I 2 C temperature sensor with integrated serial presence-detect (SPD) EEPROM
  • On-die V REFDQ generation and calibration
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Supports ECC error detection and correction
  • Terminated control, command, and address bus
  • V DD = 1.20V (NOM)
  • V DDSPD = 2.5V (NOM)
  • V PP = 2.5V (NOM)
G-forbes Micron MTA18ADF2G72PDZ-3G2E1R memory module 16 GB 1 x 16 GB DDR4 3200 MHz
Quick Code: Q802055Part Code: MTA18ADF2G72PDZ-3G2E1R
Quick Code: Q802055Part Code: MTA18ADF2G72PDZ-3G2E1RMicron
Quick Code: Q802055
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RRP £120.00 SAVE 63%
£37.39 ex. VAT
£44.87



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Overview



Micron MTA18ADF2G72PDZ-3G2. Component for: PC/Server, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 288-pin DIMM, CAS latency: 22, ECC




At-a-glance



  • 16 internal banks; 4 groups of 4 banks each

  • 16GB (2 Gig x 72)

  • 288-pin, registered dual in-line very low profile memory module (VLP RDIMM)

  • Data bus inversion (DBI) for data bus

  • DDR4 functionality and operations supported as defined in the component data sheet

  • Dual-rank

  • Fast data transfer rate:PC4-3200, PC4-2400

  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)

  • Fly-by topology

  • Gold edge contacts

  • Halogen-free

  • Low-power auto self refresh (LPASR)

  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

  • On-board I 2 C temperature sensor with integrated serial presence-detect (SPD) EEPROM

  • On-die V REFDQ generation and calibration

  • Selectable BC4 or BL8 on-the-fly (OTF)

  • Supports ECC error detection and correction

  • Terminated control, command, and address bus

  • V DD = 1.20V (NOM)

  • V DDSPD = 2.5V (NOM)

  • V PP = 2.5V (NOM)




Reasons to buy


  • 16 internal banks; 4 groups of 4 banks each
  • 16GB (2 Gig x 72)
  • 288-pin, registered dual in-line very low profile memory module (VLP RDIMM)
  • Data bus inversion (DBI) for data bus
  • DDR4 functionality and operations supported as defined in the component data sheet
  • Dual-rank
  • Fast data transfer rate:PC4-3200, PC4-2400
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Fly-by topology
  • Gold edge contacts
  • Halogen-free
  • Low-power auto self refresh (LPASR)
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • On-board I 2 C temperature sensor with integrated serial presence-detect (SPD) EEPROM
  • On-die V REFDQ generation and calibration
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Supports ECC error detection and correction
  • Terminated control, command, and address bus
  • V DD = 1.20V (NOM)
  • V DDSPD = 2.5V (NOM)
  • V PP = 2.5V (NOM)

Specification


Technical Description: Micron MTA18ADF2G72PDZ-3G2E1R memory module 16 GB 1 x 16 GB DDR4 3200 MHz

Features
Certification:
REACH
Lead plating:
Gold
Module configuration:
2048M x 72
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
Memory ranking:
2
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
22
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Yes
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
3200 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 16 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
16 GB
Buffered memory type:
Registered (buffered)

General
Type:Characteristics of the device.
Memory RAM

Logistics data
Harmonized System (HS) code:
84733020

Operational conditions
Operating temperature (T-T):The minimum and maximum temperatures at which the product can be safely operated.
0 - 95 °C

Sustainability
Sustainability certificates:
RoHS

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
18.9 mm
Depth:The distance from the front to the back of something.
3.9 mm
Width:The measurement or extent of something from side to side.
133.5 mm


Delivery Options

3 Working Days £4.95
Next Working Day £7.95
More delivery info

Product details


MTA18ADF2G72PDZ-3G2E1R Micron 0649528821102 B089CY5WQY

Micron MTA18ADF2G72PDZ-3G2E1R memory module 16 GB 1 x 16 GB DDR4 3200 MHz

£44.87 and In stock

SKUMTA18ADF2G72PDZ-3G2E1R

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